| 摘要 |
PROBLEM TO BE SOLVED: To provide a treating device which can avoid thermal adverse effects to a treating unit, etc., from an object to be treated without deteriorating the throughput. SOLUTION: In a heat-treating unit, the height of supporting pins PIN from a surface of a plate P, which is set as a datum position when the pins PIN receive a wafer W from a transfer device 22 is set at h1. In a transfer mechanism (FXT), the height of supporting pins PIN from the surface of the plate P, when the pins PIN hold the wafer W after receiving the wafer W from the device 22, is set at h2. In this case, a relation h1<h2 is established between the heights h1 and h2. |
