VERTICAL GALLIUM NITRIDE-BASED LED HAVING IMPROVED LUMINANCE CHARACTERISTIC BY USING CONDUCTIVE SUBSTRATE AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A vertical gallium nitride-based led and fabricating method thereof are provided to improve the luminance and the reliability by removing a sapphire substrate and attaching a conductive substrate such as a silicon substrate. CONSTITUTION: A light emitting structure(125) is formed by stacking sequentially the first conductive type GaN clad layer(125a), an active layer(125b), and the second conductive type GaN clad layer(125c) on a sapphire substrate. The light emitting structure is separated from the sapphire substrate except for the first conductive type GaN clad layer of 100 angstrom. A conductive substrate(131) is attached on an upper surface of the light emitting structure by using a conductive adhesion layer. The sapphire substrate is separated from the light emitting structure by using leaser beams. The first contact and the second contact are formed on the sapphire-substrate-removed side of the first conductive type clad layer and the exposed side of the conductive substrate. The conductive substrate is cut according to the separated light emitting structure.