SEMICONDUCTOR DEVICE EQUIPPED WITH STRUCTURE HAVING EXCELLENT RESISTANCE TO HUMIDITY, CONTROLLING CHARACTERISTIC FLUCTUATION TO LOW LEVEL, AND PROVIDING HIGH RELIABILITY

摘要

PURPOSE: A semiconductor device is provided to improve a resistance to humidity and obtain high reliability by using a structure exhibiting excellence in a manufacturing margin. CONSTITUTION: A silicon oxide layer(10) is formed on an underlying layer. A fuse line(3) is buried in the silicon oxide layer in order to form a fuse. A metal interconnect line is buried in the silicon oxide layer and the underlying layer to surround the fuse line. The metal interconnect line is used for constituting a shield ring. A protective layer is formed on the silicon oxide layer. The protective layer has a resistance to humidity. An opening is formed in the protective layer which is defined on the fuse line. The protective layer is directly connected to an upper surface of the metal interconnect line without holding the silicon oxide layer therebetween.