发明名称 |
STRONTIUM TITANATE THIN FILM LAMINATE AND ITS FORMING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To solve a problem that a bulk single crystal STO is a very useful dielectric body because of the practical use of superconduction or a hygenic device since the STO shows a high dielectric constant at low temperatures, but the STO has a fault that the dielectric constant is lowered when the STO is changed into a thin film and the fault has not been overcome up to the present date. SOLUTION: The STO film is constituted of first and second two-layered structure, and an interface of two layers is processed so as to be a chemically and mechanically ground (CMP) surface whereby a high dielectric constant can be obtained successfully even in the STO of a thin film. COPYRIGHT: (C)2005,JPO&NCIPI
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申请公布号 |
JP2004349481(A) |
申请公布日期 |
2004.12.09 |
申请号 |
JP20030145086 |
申请日期 |
2003.05.22 |
申请人 |
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL & TECHNOLOGY |
发明人 |
TAKASHIMA HIROSHI;SHOJI AKIRA;ITO JUNJI;WANG RUIPING;ITO MITSURU |
分类号 |
C23C14/06;H01L21/822;H01L21/8246;H01L27/04;H01L27/105;H01L39/24;(IPC1-7):H01L21/822 |
主分类号 |
C23C14/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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