发明名称 FILM-FORMING METHOD
摘要 PROBLEM TO BE SOLVED: To improve the coverage of a metallic film formed on a fine pattern. SOLUTION: The film-forming method for forming the metallic film on a substrate Wf to be treated comprises a first step of supplying the gas of a metal carbonyl compound onto the substrate Wf, and a second step of supplying the gas of an organic compound for forming a coordination compound on the substrate. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004346401(A) 申请公布日期 2004.12.09
申请号 JP20030146957 申请日期 2003.05.23
申请人 TOKYO ELECTRON LTD 发明人 YAMAZAKI HIDEAKI;MATSUZAWA OKIAKI;KOUNO YUMIKO
分类号 C23C16/16;C23C16/455;H01L21/285;H01L21/3205;H01L23/52;(IPC1-7):C23C16/16;H01L21/320 主分类号 C23C16/16
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