发明名称 |
Nonvolatile memory device comprising one switching device and one resistant material and method of manufacturing the same |
摘要 |
A nonvolatile memory device including one transistor and one resistant material and a method of manufacturing the nonvolatile memory device are provided. The nonvolatile memory device includes a substrate, a transistor formed on the substrate, and a data storage unit connected to a drain of the transistor. The data storage unit includes a data storage material layer having different resistance characteristics in different voltage ranges. |
申请公布号 |
US2004245557(A1) |
申请公布日期 |
2004.12.09 |
申请号 |
US20040852287 |
申请日期 |
2004.05.25 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SEO SUN-AE;YOO IN-KYEONG;LEE MYOUNG-JAE;PARK WAN-JUN |
分类号 |
G11C13/00;G11C11/15;H01L27/10;H01L27/24;H01L45/00;(IPC1-7):G11C11/34 |
主分类号 |
G11C13/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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