| 发明名称 |
System and method for depositing a graded carbon layer to enhance critical layer stability |
| 摘要 |
A method for fabricating a complimentary metal-oxide semiconductor (CMOS) device (100) has the steps of providing a substrate (102) and forming a layer of Silicon-Germanium-Carbon (SiGeC) (104) over the substrate (102). The layer of SiGeC (104) has between about 0.001 to 2 percent C by weight. The C concentration in the layer of SiGeC (104) is changed while forming the layer of SiGeC (104).
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| 申请公布号 |
US2004248354(A1) |
申请公布日期 |
2004.12.09 |
| 申请号 |
US20040882439 |
申请日期 |
2004.07.01 |
| 申请人 |
CHIDAMBARAM PR;CHAKRAVARTHI SRINIVASAN;BU HAOWEN |
发明人 |
CHIDAMBARAM PR;CHAKRAVARTHI SRINIVASAN;BU HAOWEN |
| 分类号 |
H01L21/20;H01L21/205;H01L21/8238;H01L29/10;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/20 |
| 代理机构 |
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