发明名称 THIN FILM CIRCUIT DEVICE, ITS MANUFACTURING METHOD, ELECTROOPTIC DEVICE, AND ELECTRONIC EQUIPMENT
摘要 PROBLEM TO BE SOLVED: To provide a thin film circuit device that is ideal for realizing a three-dimensional circuit structure. SOLUTION: In this thin film circuit device, a first thin film circuit layer (21) containing a first thin film circuit formed between a base layer and a protective layer, and a lower connection electrode (211) connected to the first thin film circuit and exposed on part of the bottom surface of the base layer and a second thin film circuit layer (22) containing a second thin film circuit formed between the base layer and the protective layer, an upper connection electrode (229) connected to the second thin film circuit and exposed on part of the top surface of the protective layer, and a lower connection electrode (221) connected to the second thin film circuit and exposed on part of the bottom surface of the base layer, are laminated upon another. The first and the second thin film circuits (21 and 22) are interlocked with each other by connecting the lower connection electrode (211) of the first thin film circuit layer (21) and the upper electrode (229) of the second thin film circuit layer (22) to each other. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004349513(A) 申请公布日期 2004.12.09
申请号 JP20030145468 申请日期 2003.05.22
申请人 SEIKO EPSON CORP 发明人 UTSUNOMIYA SUMIO
分类号 G02F1/1345;G02F1/136;G09F9/30;H01L21/02;H01L21/336;H01L21/768;H01L21/77;H01L21/8238;H01L21/84;H01L23/52;H01L27/00;H01L27/08;H01L27/092;H01L27/12;H01L29/786;H01L51/50;(IPC1-7):H01L27/12;H01L21/823;G02F1/134;H05B33/14 主分类号 G02F1/1345
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