发明名称 Lateral field-effect-controllable semiconductor component for RF applications
摘要 The present invention relates to a semiconductor component. The component includes a semiconductor body with a first semiconductor layer of a first conduction type and a second semiconductor layer of a second conduction type. The component includes, in the second semiconductor layer, a first terminal zone of the second conduction type, a drift zone of the second conduction type, a channel zone of the first conduction type, which is formed between the first terminal zone and the drift zone, and a second terminal zone of the second conduction type, which is arranged at a distance from the channel zone in the lateral direction of the semiconductor body. The component also includes a first drive electrode and at least one second drive electrode.
申请公布号 US2004245597(A1) 申请公布日期 2004.12.09
申请号 US20040806958 申请日期 2004.03.23
申请人 INFINEON TECHNOLOGIES AG 发明人 TIHANYI JENOE
分类号 H01L29/06;H01L29/423;H01L29/78;(IPC1-7):H01L29/76 主分类号 H01L29/06
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