| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-frequency power bipolar transistor having a multi-finger structure, which attains steady operation at the time of high output without increasing the number of steps of treatment and a chip area comparing with the conventional bipolar transistor. SOLUTION: By reducing the impurity concentration in a portion of an external emitter electrode or an external base electrode which is for establishing connection to wiring from an intrinsic emitter region or an intrinsic base region, and setting the resistance higher than that in the intrinsic region, thereby making it function as a ballast resistor, the reliability is improved in high output operation. COPYRIGHT: (C)2005,JPO&NCIPI
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