IMAGE SENSOR

摘要

PROBLEM TO BE SOLVED: To overcome the problem that when dopant layer of N+type used as light receiving section is formed in well layer of P type provided in a semiconductor substrate of N type in order to avoid the occurrence of crosstalk between pixels, detection sensitivity decreases because bonding capacitance between the well layer of P type and the dopant layer of N+type increases. SOLUTION: An image sensor comprises a second conductive (P type) well 12 formed in one conductive (N type) semiconductor substrate 11 by a complementary MOS process, and the light receiving section (a dopant layer 13 of N+type) receiving incident light. The light receiving section comprises a first dopant layer (a dopant layer 14 of N-type) of a first conductive type which is formed by ion implantation process added to the complementary MOS process in the second conductive well 12. COPYRIGHT: (C)2005,JPO&NCIPI