| 摘要 |
<p>PROBLEM TO BE SOLVED: To prevent the defect of gate metallic layer generated when the layer is exposed to a photoresist developer by having a stage for forming a thin first anodically oxidized layer on patterned metals and a stage for forming a second anodically oxidized layer on this first anodically oxidized layer, etc. SOLUTION: An Al layer is deposited over the entire surface of a glass substrate 121 and gate bus wiring pads, gate bus wirings 113 and gate electrodes 103 are patterned. The gate bus wiring pads, the gate bus wirings 113 and the gate electrodes 103 branched from the gate wiring to be formed are simultaneously patterned. Next, the first anodically oxidized layer 131 of the thickness below a prescribed value is formed on the patterned Al layer. The second anodically oxidized layer 132 is formed on the first anodically oxidized layer 131 exclusive of the gate bus wiring pads and holding capacitors. A protective mask is formed to prevent the formation of the second anodically oxidized layer 132 on the gate bus wiring pads and the holding capacitor electrodes during this stage.</p> |
