发明名称 Process for detaching layers of material
摘要 A process for detaching two layers of material according to a weakened zone defined between the layers. This process includes the thermal annealing of a structure that incorporates the layers, with the annealing bringing the temperature from a starting temperature to a final annealing temperature while evolving according to a first phase up to a transition temperature, then according to a second phase during which the rise in temperature per unit of time is greater than that of the first phase. The invention also concerns an application for using this process in a particular semiconductor fabrication technique.
申请公布号 US6828216(B2) 申请公布日期 2004.12.07
申请号 US20030426717 申请日期 2003.05.01
申请人 S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES S.A. 发明人 SCHWARZENBACH WALTER;MALEVILLE CHRISTOPHE
分类号 H01L27/12;H01L21/02;H01L21/762;(IPC1-7):H01L21/30;H01L21/46 主分类号 H01L27/12
代理机构 代理人
主权项
地址