SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR LIGHT EMITTING ELEMENT, AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element and a semiconductor substrate, having a light emitting layer of a quantum dot structure type, capable of realizing a light emitting which can be practically usable.

SOLUTION: A group III nitride base layer including at least aluminum and having a dislocation density of 1×1011/cm2or less with 200 seconds or less of a X-ray rocking curve half-value-width on a (002) surface is formed on a predetermined wafer material. A p-type semiconductor layer group, comprising the group III nitride with the Ga content of 50 atomic % or higher to all group III elements, having a carrier density of 1×1016/cm2or more is formed on the group III nitride base layer. A light emitting layer including a plurality of island-like crystals isolated mutually is formed on the p-type semiconductor layer group. An n-type semiconductor layer group comprising the group III nitride with the Ga content of 50 atomic % or higher to all the group III elements is formed on the light emitting layer.

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