METHOD OF FORMING LOW PRESSURE SILICON NITRIDE LAYER WITHOUT LIFTING

摘要

PURPOSE: A method of forming a low pressure silicon nitride layer is provided to prevent the silicon nitride layer from being lifted by forming the silicon nitride layer on one side alone of one wafer in a unit chamber. CONSTITUTION: A unit chamber(10) with one heater(11) is provided. A wafer(12) is loaded on the heater. A silicon nitride layer is formed on one surface of the wafer by using an LPCVD(Low Pressure Chemical Vapor Deposition). The LPCVD is performed by supplying one selected from a group consisting of NH3/SiH4 and NH3/SiCl2H2 at a temperature of 400 °C or more under a pressure state of l Torr to atmospheric conditions.