Method for forming a crown capacitor

摘要

The invention provides a method for forming a crown capacitor. A semiconductor substrate having a pad stacked layer on the surface and a trench formed therein is provided. Next, a buried plate in the substrate around the bottom part of the trench is formed, followed by the formation of a lower plate in the trench without covering the sidewall of the trench. A crown-shaped capacitor dielectric layer is thus formed along the sidewall of the trench and the lower plate. This crown capacitor, having a capacitor dielectric layer with greater surface area, provides greater capacitance.