发明名称 |
Methods and systems for high-aspect-ratio gapfill using atomic-oxygen generation |
摘要 |
Methods and systems are provided for depositing silicon oxide in a gap on a substrate. The silicon oxide is formed by flowing a process gas into a process chamber and forming a plasma having an overall ion density of at least 10<11 >ions/cm<3>. The process gas includes H2, a silicon source, and an oxidizing gas reactant, and deposition into the gap is achieved using a process that has simultaneous deposition and sputtering components. The probability of forming a void is reduced by ensuring that the plasma has a greater density of ions having a single oxygen atom than a density of ions having more than one oxygen atom.
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申请公布号 |
US2004241342(A1) |
申请公布日期 |
2004.12.02 |
申请号 |
US20030446531 |
申请日期 |
2003.05.27 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
KARIM M. ZIAUL;MOGHADAM FARHAD K.;SALIMIAN SIAMAK |
分类号 |
C23C16/04;C23C16/40;C23C16/507;H01L21/316;H01L21/762;(IPC1-7):C23C14/00;C23C14/32 |
主分类号 |
C23C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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