发明名称 |
Semiconductor device and method for fabricating the same |
摘要 |
A semiconductor device has a first semiconductor layer composed of a group III-V nitride, an oxide film formed by oxidizing a second semiconductor layer composed of a group III-V nitride to be located on the gate electrode formation region of the first semiconductor layer, an insulating film formed on the oxide film to have a composition different from the composition of the oxide film, and a gate electrode formed on the insulating film.
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申请公布号 |
US2004238860(A1) |
申请公布日期 |
2004.12.02 |
申请号 |
US20040889028 |
申请日期 |
2004.07.13 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO.,LTD. |
发明人 |
INOUE KAORU;IKEDA YOSHITO;HIROSE YUTAKA;NISHII KATSUNORI |
分类号 |
H01L21/316;H01L21/28;H01L21/336;H01L29/20;H01L29/51;H01L29/78;H01L29/786;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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