| 摘要 |
<p>To effect erase and program operations, i.e., rewrite of the non-volatile memory device efficiently with small electric power consumption and at high speed, a plurality of memory blocks that have a plurality of sectors and that each include a plurality of non-volatile memory cells are connected to buffer memories having at least the same memory capacity as a sector, and a read/write circuit generates internal addresses and timing for selecting sectors according to the external address and timing signals to control the read-out and rewrite of data between the sectors corresponding to the internal addresses and the buffer memories corresponding to the sectors, wherein the read/write circuit selects the sectors at timings shifted from one another and erases or programs the data in the selected sector in order to rewrite the data.</p> |
