发明名称 CAPACITY CELL AND SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THEM
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device wherein the reinforcement of a high-drive cell power source is made possible by decreasing voltage drops in feeder lines and by suppressing or reducing circuit size enlargement, and to provide a method of designing the same. SOLUTION: A capacity cell 10 for noise reduction in a high-drive cell or the like has vias 13, 14 for feeding power from upper-layer wiring layers 17, 18 to wiring layers 15, 16 arranged in the capacity cell region upper layer, and the resistance of the feeder lines is made to be reduced. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004342924(A) 申请公布日期 2004.12.02
申请号 JP20030139239 申请日期 2003.05.16
申请人 NEC ELECTRONICS CORP;NEC MICRO SYSTEMS LTD 发明人 SAKURABAYASHI TARO;KATO TOSHIKAZU
分类号 G06F17/50;H01L21/82;H01L21/822;H01L27/02;H01L27/04;H01L27/08;(IPC1-7):H01L21/822 主分类号 G06F17/50
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