发明名称 |
CAPACITY CELL AND SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THEM |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device wherein the reinforcement of a high-drive cell power source is made possible by decreasing voltage drops in feeder lines and by suppressing or reducing circuit size enlargement, and to provide a method of designing the same. SOLUTION: A capacity cell 10 for noise reduction in a high-drive cell or the like has vias 13, 14 for feeding power from upper-layer wiring layers 17, 18 to wiring layers 15, 16 arranged in the capacity cell region upper layer, and the resistance of the feeder lines is made to be reduced. COPYRIGHT: (C)2005,JPO&NCIPI
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申请公布号 |
JP2004342924(A) |
申请公布日期 |
2004.12.02 |
申请号 |
JP20030139239 |
申请日期 |
2003.05.16 |
申请人 |
NEC ELECTRONICS CORP;NEC MICRO SYSTEMS LTD |
发明人 |
SAKURABAYASHI TARO;KATO TOSHIKAZU |
分类号 |
G06F17/50;H01L21/82;H01L21/822;H01L27/02;H01L27/04;H01L27/08;(IPC1-7):H01L21/822 |
主分类号 |
G06F17/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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