发明名称 A method of manufacturing a wafer
摘要 <p>The method involves annealing heterogeneous material compound, where the annealing step is stopped before a splitting of the compound. The annealing step is performed at an energy of up to 99 percent of an energy of a thermal splitting at which the compound is split. The material compound is irradiated with photons to obtain a splitting of the compound at a pre-determined splitting area (5).</p>
申请公布号 EP1482548(A1) 申请公布日期 2004.12.01
申请号 EP20030291252 申请日期 2003.05.26
申请人 S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES S.A. 发明人 MAURICE, THIBAUT;CAYREFOURCQ, IAN;FOURNEL, FRANCK
分类号 H01L21/02;H01L21/265;H01L21/762;H01L27/12;(IPC1-7):H01L21/762;H01L21/20 主分类号 H01L21/02
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