发明名称 |
A method of manufacturing a wafer |
摘要 |
<p>The method involves annealing heterogeneous material compound, where the annealing step is stopped before a splitting of the compound. The annealing step is performed at an energy of up to 99 percent of an energy of a thermal splitting at which the compound is split. The material compound is irradiated with photons to obtain a splitting of the compound at a pre-determined splitting area (5).</p> |
申请公布号 |
EP1482548(A1) |
申请公布日期 |
2004.12.01 |
申请号 |
EP20030291252 |
申请日期 |
2003.05.26 |
申请人 |
S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES S.A. |
发明人 |
MAURICE, THIBAUT;CAYREFOURCQ, IAN;FOURNEL, FRANCK |
分类号 |
H01L21/02;H01L21/265;H01L21/762;H01L27/12;(IPC1-7):H01L21/762;H01L21/20 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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