ERASING AND PROGRAMMING AN ORGANIC MEMORY DEVICE AND METHODS OF OPERATING AND FABRICATING

摘要

An organic memory cell (100, 1300, 1500) made of two electrodes (104, 110, 1304, 1306, 1502, 1504) with a selectively conductive media (106/108, 1308) between the two electrodes (104, 110, 1304, 1306, 1502, 1504) is disclosed. The selectively conductive media (106/108, 1308) contains an organic layer (108, 300, 400, 500) and passive layer (106, 200). The selectively conductive media (106/108, 1308) is programmed by applying bias voltages that program a desired impedance state (1301, 1302, 1303) for a memory cell (100, 1300, 1500). The desired impedance state (1301, 1302, 1303) represents one or more bits of information and the memory cell (100, 1300, 1500) does not require constant power or refresh cycles to maintain the desired impedance state. Furthermore, the selectively conductive media (106/108, 1308) is read by applying a current and reading the impedance of the media (106/108, 1308) in order to determine the impedance state (1301, 1302, 1303) of the memory cell (100, 1300, 1500). Methods of making the organic memory devices/cells (100, 1300, 1500), methods of using the organic memory devices/cells (100, 1300, 1500), and devices such as computers containing the organic memory devices/cells (100, 1300, 1500) are also disclosed.