发明名称 Method of manufacturing semiconductor device
摘要 Disclosed is a method of manufacturing a semiconductor device, which prevents a contact resistance due to a native oxide film from being increased. Semiconductor substrate on which a lower structure having a junction region is formed is prepared. Interlayer dielectric film is formed over a whole surface of semiconductor substrate. Contact hole exposing the junction region is formed by etching interlayer dielectric film. Dry-cleaning and wet-cleaning for a substrate surface exposed by the contact hole are sequentially performed. Washed contact surface is preliminarily treated under reducing gas atmosphere to remove a native oxide film formed on contact surface. Impurity is additionally doped to a surface of the junction region in-situ so that impurity damages on preliminary-treated contact surface are compensated for. Conductive film is deposited on the contact hole and the interlayer dielectric film in-situ.
申请公布号 US2004235282(A1) 申请公布日期 2004.11.25
申请号 US20030704231 申请日期 2003.11.07
申请人 LEE SEOK KIU;KIM IL WOOK 发明人 LEE SEOK KIU;KIM IL WOOK
分类号 H01L21/28;H01L21/02;H01L21/223;H01L21/285;H01L21/306;H01L21/311;H01L21/324;H01L21/768;(IPC1-7):H01L21/44;H01L21/425 主分类号 H01L21/28
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