UNITARY DUAL DAMASCENE PROCESS USING IMPRINT LITHOGRAPHY
摘要
An exemplary method for using multi-tiered templates with imprint lithography for producing dual damascene features is disclosed as comprising the steps of inter alia: positioning (step 150) a multi-tiered lithographic template (130) in contact with a resist layer (120); applying pressure to the template (130) so that the resist material (120) flows into the relief pattern of the template (130) thereby forming a patterned resist layer (125); optionally curing the patterned resist layer (125); removing (step 160) the template (130) from the patterned resist layer (125); and etching (steps 170, 180) the patterned resist layer (125) to develop a via-and-trench pattern in the patterning layer (117). Disclosed features and specifications may be variously controlled, configured, adapted or otherwise optionally modified to further improve or otherwise optimize the fabrication of dual damascene or other multi-tiered structures.
申请公布号
WO2004102624(A2)
申请公布日期
2004.11.25
申请号
WO2004US14251
申请日期
2004.05.07
申请人
FREESCALE SEMICONDUCTOR, INC.;RESNICK, DOUGLAS, J.;HECTOR, SCOTT, D.