| 摘要 |
The present invention provides a method for forming a via (e.g., a trench, via or contact) in a substrate. The method, in one embodiment of the invention, includes patterning an opening 220 in a photoresist layer 210 located over an intermediate layer located over a substrate. In that particular embodiment the opening 220 has a predetermined width 230. The method may further include etching into the intermediate layer 120 such that an intermediate opening 310 is formed, the intermediate opening 310 having a decreasing width that terminates at a targeted width 320 less than the predetermined width 230. Additionally, the method may include continuing the etching within the intermediate opening 310 and at least partially into the substrate 110 to form a via opening 510 in the substrate. In this particular embodiment, the width 520 of the via opening 510 is substantially equal to the targeted width 320.
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