Low-temperature, low-resistivity heavily doped P-type polysilicon deposition

摘要

A method to create a low resistivity P+in-situ doped polysilicon film at low temperature from SiH4 and BCl3 with no anneal required. At conventional dopant concentrations using these source gases, as deposition temperature decreases below about 550 degrees C., deposition rate decreases and sheet resistance increases, making production of a high-quality film impossible. By flowing very high amounts of BCl3, however, such that the concentration of boron atoms in the resultant film is about 7x10<20 >or higher, the deposition rate and sheet resistance are improved, and a high-quality film is produced.