| 摘要 |
A semiconductor memory device of the present invention includes a first memory array, a first address register for storing therein a first address of the first memory array, a second memory array, a second address register for storing therein a second address of the second memory array, a multiplexer connected to the first memory array and the second memory array and to a memory output unit for selectively outputting the first memory array or the second memory array, and an array selection circuit for selecting the first memory array for re-programming in accordance with an input address and selecting the second memory array for a reading operation. The array selection circuit sends the first address to the, first address register, sends the second address to the second address register, and further, controls the multiplexer, so as to allow the second memory array to be connected to the memory output unit during re-programming of the first memory array. Each of the first memory array and the second memory array includes a plurality of nonvolatile memory cells. It is therefore possible to improve processing speed by enabling data to be read in a re-programming process on the semiconductor memory device.
|
