发明名称 |
BUILDING METHOD OF ELECTRIC CONTACT ON SUBSTRATE, AND ELECTRIC CONTACT BUILT THEREBY |
摘要 |
PROBLEM TO BE SOLVED: To deposit metal in such a manner that the conductor on a stop hole rises and becomes hemispherical following the process which fills up the stop hole with metal wherein conductor itself on the stop hole becomes a contact of a connector. SOLUTION: The inside of the stop hole is plated initially with a low current density, e.g. current density of 0.5-10 A/dm<SP>2</SP>. After the plating reaches a stop hole upper surface, the current is adjusted and the current density of 5-10 times the initial value is held. The metal is deposited in such a manner that the hemispherical form is obtained wherein the ratio of the magnitude in the diametric direction of the conductor on the stop hole to the magnitude in the height direction is almost 1 to 1. COPYRIGHT: (C)2005,JPO&NCIPI
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申请公布号 |
JP2004335666(A) |
申请公布日期 |
2004.11.25 |
申请号 |
JP20030128282 |
申请日期 |
2003.05.06 |
申请人 |
D D K LTD |
发明人 |
OTSUKI TOMOYA;YAMAZAKI YASUE;OMORI HIDEO |
分类号 |
H05K3/40;H01L23/12;H05K1/02;H05K1/11;(IPC1-7):H05K3/40 |
主分类号 |
H05K3/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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