| 摘要 |
PROBLEM TO BE SOLVED: To produce a current distribution in the direction of a resonator and to generate a light confinement coefficient distribution in an active layer in the direction of the resonator at the same time in a semiconductor light emitting device. SOLUTION: The semiconductor light emitting device contains a Fabry-Perot type semiconductor laser having asymmetrical end surface light reflectivity. Regions 1 formed of a semiconductor layer having the same conductivity type with an adjacent p-type InP clad layer 8 or p-type InP regions 5A and regions 2 formed of a semiconductor layer having the same conductivity type with the regions 1, lower in dopant concentration than the regions 1, and higher in reflectivity than the regions 1 or p-type InGaAs regions 5B are alternately arranged as an intermediate clad layer 5 in the direction of a resonator on an InGaAsP optical confinement layer 4. The volume ratio of the regions 2 to the intermediate clad layer 5 is set lower near a light low-reflection film 12 than near a light high-reflection film 13. COPYRIGHT: (C)2005,JPO&NCIPI
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