| 摘要 |
Disclosed is a method for forming a MIM capacitor, the method comprising steps of: providing a semiconductor substrate formed with a base layer including a metallic pattern; depositing a first metallic layer to be used for a lower electrode on the base layer; depositing a first middle layer on the first metallic layer in order to improve the surface roughness of the first metallic layer and prevent oxidization thereof; depositing a dielectric layer with a high dielectric constant on the first middle layer; depositing a second middle layer on the dielectric layer in order to increase band gap energy; depositing a second metallic layer used for the upper electrode on the second middle layer; and completing the formation of the lower electrode by patterning the first metallic layer.
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