发明名称 DUMMY WAFER AND ITS MANUFACTURING METHOD
摘要 A dummy wafer and a method for manufacturing the same are provided to suppress foreign materials by preventing the peeling of stack structure using the dummy wafer having an unevenness surface. A body(11) of a dummy wafer is formed by an amorphous polysilicon material. A surface of the body of the dummy wafer includes an unevenness portion(13) formed by performing surface treatment using a Blast scheme which sprays fine blast materials at high speed. The body is formed by slicing thinly an amorphous ingot which is formed from liquid amorphous polysilicon. A height of the unevenness portion is 0.5-6 mum. Nitride and poly films are deposited initially on the surface of the body of the dummy wafer.
申请公布号 KR20080077507(A) 申请公布日期 2008.08.25
申请号 KR20070017140 申请日期 2007.02.20
申请人 HWANG, BYUNG RYUL 发明人 HWANG, BYUNG RYUL
分类号 H01L21/20 主分类号 H01L21/20
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