| 发明名称 |
Semiconductor device and method for fabricating the same |
| 摘要 |
A semiconductor device has a Group III nitride semiconductor layer and a gate electrode formed on the Group III nitride semiconductor layer. The gate electrode contains an adhesion enhancing element. A thermally oxidized insulating film is interposed between the Group III nitride semiconductor layer and the gate electrode.
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| 申请公布号 |
US2004227153(A1) |
申请公布日期 |
2004.11.18 |
| 申请号 |
US20030736605 |
申请日期 |
2003.12.17 |
| 申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
HIROSE YUTAKA;IKEDA YOSHITO;INOUE KAORU |
| 分类号 |
H01L21/285;H01L21/335;H01L29/20;H01L29/423;H01L29/47;H01L31/0328;(IPC1-7):H01L31/032 |
主分类号 |
H01L21/285 |
| 代理机构 |
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