| 发明名称 |
Laterally-diffused metal oxide semiconductor, high frequency transistor includes pocket zone of first conductivity type, introduced into semiconductor material |
| 摘要 |
<p>Under the RESURF zone (6) a pocket zone (7) of a first conductivity type is introduced into the semiconductor material (2).</p> |
| 申请公布号 |
DE10311699(A1) |
申请公布日期 |
2004.11.18 |
| 申请号 |
DE2003111699 |
申请日期 |
2003.03.17 |
| 申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
TADDIKEN, HANS |
| 分类号 |
H01L29/10;H01L29/78;(IPC1-7):H01L29/78 |
主分类号 |
H01L29/10 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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