发明名称 A POLYMER SOLUTION FOR NANOPRINT LITHOGRAPHY TO REDUCE IMPRINT TEMPERATURE AND PRESSURE
摘要 A method of forming features on substrates (10) by imprinting is provided. The method comprises: (a) forming a polymer solution comprising at least one polymer dissolved in at least one polymerizable monomer; and (b) depositing the polymer solution on the substrate (10) to form a liquid film (12) thereon; and then either: (c) curing the liquid film (12) by causing the monomer(s) to polymerize and optionally cross-linking the polymer(s) to thereby form a polymer film (12'), the polymer film (12') having a glass transition temperature (Tg); and imprinting the polymer film (12') with a mold (16) having a desired pattern (16a) to form a corresponding negative pattern (12a) in the polymer film (12'), or (d) imprinting the liquid film (12') with the mold (16) and curing it to form the polymer film (12') having the negative pattern (12a). The temperature of imprinting is as little as 10°C above the Tg, or even less if the film (12) is in the liquid state. The pressure (20) of the imprinting can be within the range of 100 to 500 psi.
申请公布号 WO2004051714(A3) 申请公布日期 2004.11.18
申请号 WO2003US37858 申请日期 2003.11.26
申请人 HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. 发明人 JUNG, GUN-YOUNG;SIVAPACKIA, GANAPATHIAPPAN;CHEN, YONG;WILLIAMS, R STANLEY,
分类号 B29C35/08;B29C59/02;G03F7/00;G03F7/033 主分类号 B29C35/08
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