METHOD OF FORMING METAL LINE OF SEMICONDUCTOR DEVICE TO FORM A CONTACT PLUG WITHOUT VOIDS

摘要

PURPOSE: A method of forming a metal line of a semiconductor device is provided to form a contact plug without voids by removing overhangs of a barrier metal using a plasma treatment. CONSTITUTION: An interlayer dielectric is deposited on a semiconductor substrate. A contact hole is formed in the interlayer dielectric by using etching. A barrier metal(21) is deposited on the interlayer dielectric including the contact hole. At this time, overhangs(22) are formed on the barrier metal at corners of the contact hole. The overhangs are removed by performing a plasma treatment(41). A metal film for filling the contact hole is deposited on the entire surface of the resultant structure.