| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor element which does not occur problem of stress concentration, which does not damage the underlying part of bump electrodes, which hardly occurs insulation fault between bump electrodes, which hardly occurs break fault, and which does not reduce the reliability of ACF connection, during bonding. <P>SOLUTION: In the semiconductor element in which one or more bump electrode 7 is provided on one or more electrode made of multilayered metal wirings 2, 4 constructed on a semiconductor substrate 1, after a metal body (7) is formed on the electrode, the bump electrode 7 is produced by roughening the surface of the metal body rougher than when it is formed. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
