| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device wherein a damascene structure achieving excellent via contact is built, and to provide a method for manufacturing the same. SOLUTION: In an electrode pattern 6 provided in a first interlayer insulating layer 3 formed on a semiconductor substrate 1, insulator-made dummy patterns 8 are provided, which are separated from each other by specified gaps and surround the bottom of a via contact hole 5a. COPYRIGHT: (C)2005,JPO&NCIPI |
