| 摘要 |
A solid-state image sensor includes, in each pixel, a p-type well provided on a semiconductor substrate, a photodiode provided in the p-type well, a transfer gate for transferring photocharges accumulated in the photodiode, and an n-type diffusion region for receiving the transferred photocharges. The photodiode includes a first n-type accumulation region, and a second n-type accumulation region having a concentration higher than that of the first accumulation region and provided at a position deeper than the first accumulation region. The first accumulation region extends toward an end of the transfer gate, and the second accumulation region is separate from the transfer gate.
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