| 摘要 |
PURPOSE: A method for manufacturing a CMOS image sensor is provided to prevent damage of spacers at the sidewalls of a gate electrode in the process of etch-back of a salicide prevention layer, thereby obtaining a good reliability of the CMOS image sensor by forming a buffer layer between the spacer and the salicide prevention layer. CONSTITUTION: A gate insulating layer(21), a gate electrode(22), and a spacer at the sidewalls of the gate electrode are formed on a substrate(20). A buffer layer(24) is formed to cover the spacer and the gate electrode. A salicide prevention layer(25) and a BARC(Bottom Anti-Reflective Coating) film(26) are formed on the buffer layer consecutively. The BARC film is etched back to expose the salicide prevention layer, and then the salicide prevention layer is etched back to expose the buffer layer. The exposed buffer layer is removed to expose an upper surface of the gate electrode.
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