METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE TO RESTRAIN FLUCTUATION OF JUNCTION PROFILE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to reduce contact resistance and to restrain fluctuation of junction profile by forming a junction region using low dose. CONSTITUTION: A gate(3) is formed on a substrate(1) with an isolation layer(2). A spacer(4) is formed at both sidewalls of the gate. A junction region(5) is formed in the substrate by implanting dopants having low dose. An interlayer dielectric(6) is formed on the resultant structure. A contact hole(7) is formed to expose the junction region. Particles in the contact hole are removed by cleaning. A contact plug(8) is then formed by filling a phosphorous-doped silicon layer in the contact hole.