发明名称 Semiconductor device with voltage down circuit changing power supply voltage to operating voltage
摘要 A plurality of core chips are arranged on a body of a semiconductor device, and a plurality of voltage down circuits are arranged on the outside of the core chips to lower a power supply voltage to a plurality of operating voltages of the core chips. In cases where the operating voltages differ from each other, each core chip is connected to the corresponding voltage down circuit. In cases where the operating voltages are the same as each other, one voltage down circuit corresponding to the same operating voltage is connected to a line surrounding the core chips, and the core chips are connected to the line. In cases where the operating voltage of one core chip is equal to the power supply voltage, the core chip is directly connected to a line of the power supply voltage.
申请公布号 US6820241(B2) 申请公布日期 2004.11.16
申请号 US20020164607 申请日期 2002.06.10
申请人 RENESAS TECHNOLOGY CORP.;MITSUBISHI ELECTRIC SYSTEM LSI DESIGN CORPORATION 发明人 YAMAMOTO HIROSHI
分类号 H01L21/822;G06F1/26;G11C5/14;H01L21/82;H01L23/528;H01L27/04;(IPC1-7):G06F17/50;G11C7/00 主分类号 H01L21/822
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