发明名称 RECTANGULAR NITRIDE SEMICONDUCTOR SUBSTRATE CAPABLE OF DISTINGUISHING SURFACE AND REAR SURFACE
摘要 PROBLEM TO BE SOLVED: To distinguish the surface and rear surface of a rectangular nitride semiconductor substrate without relying upon the difference in surface roughness because visual distinguishment between the surface and rear surface of a conventional GaN wafer having a mirror surface and a rough rear surface based on the difference in surface roughness is difficult and the rough rear surface may cause adhesion of particles, warping, cracking or breaking. SOLUTION: In order to distinguish the surface and rear surface, long and short cuts are provided clockwise at two corners of a rectangular GaN substrate. The surface and rear surface are distinguished by providing one cut making an angle of 5°-40°at one corner, differentiating the beveling amount between the surface side and the rear surface side or writing a letter. Since the rear surface is made smoother to have a state approximate to the surface state, adhesion of particles is reduced, warping is suppressed and cracking and chipping are reduced. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004319950(A) 申请公布日期 2004.11.11
申请号 JP20030275934 申请日期 2003.07.17
申请人 SUMITOMO ELECTRIC IND LTD 发明人 NAKAYAMA MASAHIRO;HIRANO TETSUYA
分类号 C30B29/38;C30B33/00;H01L21/02;H01L21/304;H01L23/544;H01S5/30;(IPC1-7):H01L21/02 主分类号 C30B29/38
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