Forming contacts on silicon during production of semiconductor memory devices comprises providing a silicon layer, forming a titanium liner layer on the silicon layer, forming a cobalt layer on the liner layer, and heat treating

摘要

Forming contacts on silicon during the production of semiconductor memory devices comprises providing a silicon layer (1), forming a titanium liner layer (50) on the silicon layer, forming a cobalt layer (3) on the liner layer, and heat treating so that cobalt from the cobalt layer diffuses through the liner layer to the silicon layer and an epitaxial CoSi layer (2) is formed on the surface of the silicon layer.