An active fuse includes an active fuse geometry (120) that is used to form both a variable resistor (106) and a select transistor (110). In one embodiment, the active fuse geometry is formed in a portion of an active region (160) of a semiconductor substrate (140), and a select gate (124) is disposed over an end portion (123) of the active fuse geometry to form an integral select transistor (110) for use in programming the active fuse. The use of a shared active fuse geometry within the active region allows for reduced area requirements and improved sensing margins.
申请公布号
WO2004097898(A2)
申请公布日期
2004.11.11
申请号
WO2004US12709
申请日期
2004.04.23
申请人
FREESCALE SEMICONDUCTOR, INC.;LI, CHI NAN BRIAN;HOEFLER, ALEXANDER, B.;LIN, DER-GAO
发明人
LI, CHI NAN BRIAN;HOEFLER, ALEXANDER, B.;LIN, DER-GAO