发明名称 |
MOS power device with high integration density and manufacturing process thereof |
摘要 |
A MOS power device having: a body; gate regions on top of the body and delimiting therebetween a window; a body region, extending in the body underneath the window; a source region, extending inside the body region throughout the width of the window; body contact regions, extending through the source region up to the body region; source contact regions, extending inside the source region, at the sides of the body contact regions; a dielectric region on top of the source region; openings traversing the dielectric region on top of the body and source contact regions; and a metal region extending above the dielectric region and through the first and second openings.
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申请公布号 |
US2004222483(A1) |
申请公布日期 |
2004.11.11 |
申请号 |
US20040763818 |
申请日期 |
2004.01.23 |
申请人 |
FRISINA FERRUCCIO;FERLA GIUSEPPE;MAGRI' ANGELO;SALINAS DARIO |
发明人 |
FRISINA FERRUCCIO;FERLA GIUSEPPE;MAGRI' ANGELO;SALINAS DARIO |
分类号 |
H01L21/336;H01L29/06;H01L29/08;H01L29/78;(IPC1-7):H01L29/00 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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