A method to form very high mobility vertical channel transistor by selective deposition of SiGe or multi-quantum wells (MQWs),申请号EP20020368005-传众专利搜索

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发明名称	A method to form very high mobility vertical channel transistor by selective deposition of SiGe or multi-quantum wells (MQWs)
摘要
申请公布号	EP1225624(A3)	申请公布日期	2004.11.10
申请号	EP20020368005	申请日期	2002.01.18
申请人	CHARTERED SEMICONDUCTOR MANUFACTURING PTE LTD.	发明人	CHAN, LAP;QUEK, ELGIN;SUNDARESAN, RAVI;PAN, YANG;YONG MENG LEE, JAMES;KEUNG LEUNG, YING;RAMACHANDRAMURTHY PRADEEP, YELEHANKA;ZHEN ZHENG, JIA
分类号	H01L21/336;H01L21/337;H01L29/10;H01L29/78;H01L29/80;(IPC1-7):H01L21/337;H01L21/20	主分类号	H01L21/336
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