发明名称 |
Chemical vapor deposition method for amorphous silicon and resulting film |
摘要 |
Method of depositing a layer of amorphous silicon film on a substrate at a very fast deposition rate while maintaining superior film quality. A plasma volume in a process chamber is defined. A total flow rate of a mixture of gases introduced into the chamber is also defined. The total flow rate is the sum of the flow rates of the respective gases in the mixture. Next, a process parameter that includes the plasma volume and total flow rate is defined. The process parameter is then maintained in a first predetermined relationship with a predetermined value during the deposition of the amorphous silicon film.
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申请公布号 |
US6436488(B1) |
申请公布日期 |
2002.08.20 |
申请号 |
US20000591815 |
申请日期 |
2000.06.12 |
申请人 |
AGILENT TECHNOLOGIES, INC. |
发明人 |
THEIL JEREMY A;KOOI GERRIT J;VARGHESE RON P |
分类号 |
C23C16/24;C23C16/44;C23C16/50;C23C16/52;H01L21/205;H01L31/0376;H01L31/04;H01L31/20;(IPC1-7):H05H1/24 |
主分类号 |
C23C16/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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