发明名称
摘要 Connecting structure comprises a connecting substrate with through-holes; and a number of connecting elements made of conducting material and mounted on the horizontal surface of the substrate. An independent claim is also included for a process for the production of the connecting structure comprising forming an additive layer on a surface of a silicon substrate, forming a photo lacquer on the additive layer, directing a photo mask on the photo lacquer and irradiating with UV light through the mask, developing patterns on one surface of the photo lacquer layer, producing connecting elements made from conducting elements in the patterns, removing the photo lacquer layer, removing the additive layer by etching, and mounting the connecting elements on the substrate. Preferred Features: The connecting substrate can be made from silicon or a dielectric material, such as polyimide, ceramic or glass.
申请公布号 KR100454540(B1) 申请公布日期 2004.11.05
申请号 KR20010065563 申请日期 2001.10.24
申请人 发明人
分类号 G01R1/067;G01R31/26;G01R1/073;G01R3/00;G01R31/28;H01L21/302;H01L21/48;H01L21/66;H01L23/485;H01R12/00;H01R13/24;H05K3/20;H05K3/40 主分类号 G01R1/067
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