COMPOSITION FOR FORMING POROUS FILM, METHOD FOR PRODUCING POROUS FILM, POROUS FILM, INTERLAYER DIELECTRIC FILM AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a coating liquid for forming a porous film, capable of easily providing a thin film having an arbitrarily regulated thickness by a method usable for a usual semiconductor process, and having a mesopore-size channel structure having excellent stability.

SOLUTION: The subject composition for forming the porous film comprises a solution containing a polymer obtained by hydrolyzing and condensing one or more kinds of silane compounds represented by the formula RnSi(OR')4-n, a surfactant and a nonprotonic polar solvent. The subject method for producing the porous film comprises a coating step for coating the composition for forming the porous film, a drying step following the coating step, and a step for making the film porous by removing the surfactant from the obtained film. The porous film is obtained by using the composition for forming the porous film.

COPYRIGHT: (C)2005,JPO&NCIPI