| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which restrains substrate suspension effect without deteriorating integration degree, and its manufacturing method. SOLUTION: The semiconductor device has an SOI structure forming at least one MOSFET element in a silicon layer on an insulator. The MOSFET element consists of a source region, a drain region facing the source region, a body region formed between the source region and the drain region and a gate region formed near a surface of the body region and forms a conductive channel in the body region. It comprises a suction region which is in contact with the body region and the source region, has the same conductivity type as the body region and has higher concentration than that of the body region, In the manufacturing method, such a suction region is formed in a source region side by using an ion implantation method. COPYRIGHT: (C)2005,JPO&NCIPI
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